Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates
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چکیده
Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1−xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1−xGex layer is grown at high temperatures and for x0.7. The density and size of the spherical voids can be tuned by changing Ge content in the Si1−xGex and other growth parameters.
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تاریخ انتشار 2018